Controlled low collector breakdown voltage vertical transistor f

Details Controlled low collector breakdown voltage vertical transistor f Controlled low collector breakdown voltage vertical transistor f

1995-06-13

1996-07-23

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257583, 257589, 257592, H01L 2362, H01L 27082

Patent

active

055392334

ABSTRACT:
An npn transistor having a low collector-base breakdown voltage. An emitter region (104, 106) of a first conductivity type is located in a semiconductor substrate (102). A base region (14) of a second conductivity type is located within the emitter region (104,106) and a shallow collector region (18) of the first conductivity type is located within the base region (14). The shallow collector region (18) may be doped with arsenic and/or phosphorus such that the dopant concentration and depth of the shallow collector region (18) provide a low collector-base breakdown voltage.

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