Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-15
2005-11-15
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S131000, C438S600000, C438S601000, C438S215000, C438S281000, C438S132000
Reexamination Certificate
active
06964906
ABSTRACT:
A programmable element including a semiconductor material doped with a dopant that alters the resistance of the element when exposed to actinic radiation. Rather than producing a mechanical deformation, the radiation rearranges the bonding configuration of the dopant in the element, allowing it to be placed on a chip in close proximity to other device structures without risking damage to those structures. After formation, the programmable element is subjected to a laser anneal process in which the dopant is electrically activated. The activation process allows the dopant to donate a charge carrier to the crystal structure. Rapid cooling following laser anneal preserves the desired bonding configuration of the dopant produced in the programmable element. Laser anneals have been shown to reduce the resistivity of a programmable element by at least a factor of two.
REFERENCES:
patent: 4198246 (1980-04-01), Wu
patent: 4233671 (1980-11-01), Gerzberg et al.
patent: 4462150 (1984-07-01), Nishimura et al.
patent: 4617723 (1986-10-01), Mukai
patent: 4628590 (1986-12-01), Udo et al.
patent: 4677742 (1987-07-01), Johnson
patent: 4835118 (1989-05-01), Jones, Jr. et al.
patent: 4845045 (1989-07-01), Shacham et al.
patent: 5146307 (1992-09-01), Kaya
patent: 5182225 (1993-01-01), Matthews
patent: 5585662 (1996-12-01), Ogawa
patent: 5627400 (1997-05-01), Koga
patent: 5795627 (1998-08-01), Mehta et al.
patent: 5814876 (1998-09-01), Peyre-Lavigne et al.
patent: 5882998 (1999-03-01), Sur, Jr. et al.
patent: 6168977 (2001-01-01), Konishi
patent: 6180993 (2001-01-01), Wang et al.
patent: 6198149 (2001-03-01), Ishigaki
patent: 0697708 (1996-02-01), None
patent: 5813946 0 (1983-08-01), None
patent: 6118725 3 (1986-08-01), None
patent: 6316904 1 (1988-07-01), None
patent: 7273205 (1995-10-01), None
Somit Talwar et al. “Ultra-Shallow, abrupt, and highly-activated junctions by low-energy ion implantation and laser annealing”, 1999, IEEE, pp. 1171-1174.
C. Laviron et al. “Excimer-laser activation of dopants in silicon: a new concept for uniform treatment over whole die area”, 2001, IEEE, pp. 91-94.
Journal of Applied Physics, “Arsenic Deactivation Enhanced Diffusion: A Time, Temperature, and Concentration Study”, Rousseau, et al., vol. 84, No. 7, pp. 3593-3601, Oct. 1998.
Bunt Patricia S.
Ellis-Monaghan John J.
Canale Anthony
Guerrero Maria F.
Schmeiser Olsen & Watts
LandOfFree
Programmable element with selectively conductive dopant and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Programmable element with selectively conductive dopant and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable element with selectively conductive dopant and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3473592