Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-17
2005-05-17
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S280000, C438S096000
Reexamination Certificate
active
06893916
ABSTRACT:
An integrated circuit structure for MOS-type devices including a silicon substrate of a first conductivity type; a first gate insulating regions selectively placed over the silicon substrate of the first conductivity tape; a first polycrystalline silicon layer selectively placed over the silicon substrate of the first conductivity type; a second gate insulating regions selectively placed over the first gate insulating regions and the first polycrystalline silicon layer; a second polycrystalline silicon layer selectively placed over the second gate insulating regions; first buried silicon regions of a second conductivity type, buried within the silicon substrate of the first conductivity type, placed under the first polycrystalline silicon layer and in contact therewith; and second buried silicon regions of the second conductivity type, buried within the silicon substrate of the first conductivity type, placed under the second gate insulating regions, under the second polycrystalline silicon layer and insulated therefrom.
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Baukus James P.
Chow Lap-Wai
Clark Jr. William M.
HRL Laboratories LLC
Ladas & Parry LLC
Lindsay, Jr. Walter L
Niebling John F.
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