Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2011-08-30
2011-08-30
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C257S530000, C257SE23111, C257SE21005, C257SE21041, C257SE21049, C257SE21270, C438S600000
Reexamination Certificate
active
08008669
ABSTRACT:
In one embodiment an anti-fuse structure is provided that includes a first dielectric material having at least a first anti-fuse region and a second anti-fuse region, wherein at least one of the anti-fuse regions includes a conductive region embedded within the first dielectric material. The anti-fuse structure further includes a first diamond like carbon layer having a first conductivity located on at least the first dielectric material in the first anti-fuse region and a second diamond like carbon layer having a second conductivity located on at least the first dielectric material in the second anti-fuse region. In this embodiment, the second conductivity is different from the first conductivity and the first diamond like carbon layer and the second diamond like carbon layer have the same thickness. The anti-fuse structure also includes a second dielectric material located atop the first and second diamond like carbon layers. The second dielectric material includes at least one conductively filled region embedded therein.
REFERENCES:
patent: 5789795 (1998-08-01), Sanchez et al.
patent: 6124194 (2000-09-01), Shao et al.
patent: 6251710 (2001-06-01), Radens et al.
patent: 6335228 (2002-01-01), Fuller et al.
Horak David V.
Nogami Takeshi
Ponoth Shom
Yang Chih-Chao
Brown, Esq. Katherine S.
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Tran Tan N
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