Profiled standoff structure and method for optical display...

Details Profiled standoff structure and method for optical display... Profiled standoff structure and method for optical display...

2006-09-19

2006-09-19

Nguyen, Ha (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S444000, C438S700000

Reexamination Certificate

active

07109120

ABSTRACT:
A method for forming a standoff structure for devices, e.g., optical devices, integrated circuit devices, micro-electrical mechanical systems (i.e., MEMS). The method includes providing a substrate (e.g., silicon wafer), which has a first surface region characterized by a <100> crystal orientation, a second surface region, and a thickness defined between the first surface region and the second surface region. The method includes protecting selected portions of the first surface region using a masking layer while leaving a plurality of unprotected regions. Each of the unprotected regions is to be associated with an opening through the thickness of the substrate. The method includes immersing the substrate into an etching solution. The method also includes causing removal of the plurality of unprotected regions to form a plurality of openings through the entirety of the thickness of the substrate using the etching solution. The method includes forming an angled surface region from the first surface region to the second surface region and subjecting the angled surface region to the etching solution to form a substantially vertical sidewall region to provide a resulting patterned substrate. Each of the openings is bordered by a portion of the selected portions of the first surface region. The method includes removing the masking layer.

REFERENCES:
patent: 6143190 (2000-11-01), Yagi et al.
patent: 6822326 (2004-11-01), Enquist et al.
patent: 2004/0058476 (2004-03-01), Enquist et al.

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