Profile improvement of a metal interconnect structure on a tungs

Details Profile improvement of a metal interconnect structure on a tungs Profile improvement of a metal interconnect structure on a tungs

1997-05-19

1998-01-27

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438628, 438629, 438643, 438648, 438660, 438661, 438670, H01L 2129

Patent

active

057122075

ABSTRACT:
A process for forming aluminum interconnect structures has been developed, that concentrates on alleviating the effects of the poor step coverage of the interconnect metallization, that develops in areas where aluminum overlies tungsten filled contact holes. A high pressure treatment of the aluminum based metallization layer is performed at pressures in the range of 50 to 120 Mega-pascal, to improve the coverage of the aluminum based layer, specifically in seams or voids in the underlying tungsten plugs.

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Z. Shterenfeld-Lavie et al, "A 3-Level, 0.35 micron interconnection process using an innovative, high pressure aluminum plug technology", 1995 VMIC Conference, Jun. 27-29, pp. 31-37, Jun. 1995.

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