Production worthy interconnect process for deep sub-half microme

Details Production worthy interconnect process for deep sub-half microme Production worthy interconnect process for deep sub-half microme

1996-09-10

1998-09-01

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438633, 438648, H01L 2128

Patent

active

058010955

ABSTRACT:
The present invention is directed to improving the throughput of the process for fabricating multilayer interconnects. Tungsten plugs, formed in contact/via openings etched in an interlayer dielectric, have been widely used in industry to form interconnection between different metal layers. An adhesion layer comprising a Ti/TiN stack is typically employed to support the adhesion of the tungsten plug in the contact/via openings. The present invention is directed to a process involving the formation of a Ti/TiN landing pad at the base of contact/via openings prior to the deposition of the interlayer dielectric. The process of the present invention enables the removal of the Ti under-layer and the reduction of the TiN thickness in the Ti/TiN stack. The throughput of the process for fabricating multilayer interconnects is thus greatly improved while the integrity of the devices are maintained.

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