Production of elemental films using a boron-containing...

Details Production of elemental films using a boron-containing... Production of elemental films using a boron-containing...

2006-12-05

2006-12-05

Meeks, Timothy (Department: 1762)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C438S687000, C427S250000, C427S253000, C427S255280

Reexamination Certificate

active

07144809

ABSTRACT:
The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 5281274 (1994-01-01), Yoder
patent: 5306666 (1994-04-01), Izumi
patent: 5316793 (1994-05-01), Wallace et al.
patent: 5711811 (1998-01-01), Suntola et al.
patent: 5789024 (1998-08-01), Levy et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5946598 (1999-08-01), Yeh
patent: 5956609 (1999-09-01), Lee et al.
patent: 6006763 (1999-12-01), Mori et al.
patent: 6099904 (2000-08-01), Mak et al.
patent: 6156382 (2000-12-01), Rajagopalan et al.
patent: 6206967 (2001-03-01), Mak et al.
patent: 6380627 (2002-04-01), Weihs et al.
patent: 6399479 (2002-06-01), Chen et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6482262 (2002-11-01), Elers et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6599572 (2003-07-01), Saanila et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 6727169 (2004-04-01), Raaijmakers
patent: 6800552 (2004-10-01), Elers et al.
patent: 6821889 (2004-11-01), Elers et al.
patent: 6863727 (2005-03-01), Elers et al.
patent: 2003/0031807 (2003-02-01), Elers et al.
patent: 2003/0049931 (2003-03-01), Byun et al.
patent: 2003/0082296 (2003-05-01), Elers et al.
patent: 2003/0104126 (2003-06-01), Fang et al.
patent: 2003/0123216 (2003-07-01), Yoon et al.
patent: 2003/0127043 (2003-07-01), Lu et al.
patent: 2003/0153181 (2003-08-01), Yoon et al.
patent: 2003/0157760 (2003-08-01), Xi et al.
patent: 2003/0161952 (2003-08-01), Wang et al.
patent: 2003/0181035 (2003-09-01), Yoon et al.
patent: 2003/0194825 (2003-10-01), Law et al.
patent: 2003/0203616 (2003-10-01), Chung et al.
patent: 0 387 403 (1989-10-01), None
patent: 0 394 054 (1990-04-01), None
patent: 0 442 490 (1991-02-01), None
patent: 0 573 033 (1993-06-01), None
patent: 0 774 533 (1996-10-01), None
patent: 6037041 (1994-02-01), None
patent: 6069157 (1994-03-01), None
patent: 7230957 (1995-08-01), None
patent: WO 96/18756 (1996-06-01), None
patent: WO 98/51838 (1998-11-01), None
patent: WO 00/01006 (2000-01-01), None
patent: WO 00/47796 (2000-08-01), None
“Kirk-Othmer Encyclopedia of Chemical Technology,” 4thEdition, vol. 4, John Wiley & Sons, Inc., pp. 841-878 (1992).
Bain et al., “Deposition of tungsten by plasma enhanced chemical vapour deposition,”J. Phys. IV France, vol. 9, pp. 827-833 (1999).
Girolami et al., “Tailored Organometallics as Low-Temperature CVD Precursors to Thin Films,”Materials Research Society Symposium Proceedings, vol. 121, pp. 429-438 (1988).
Jehn et al., “Gmelin Handbook of Inorganic and Organometallic Chemistry,” 8thEdition, vol. A 5b, No. 54, pp. 131-154 (1993).
Juppo et al., “Deposition of copper films by an alternate supply of CuCl and Zn,”J. Vac. Sci. Technol A, vol. 15, No. 4, pp. 2330-2333, (Jul./Aug. 1997).
Klaus et al., “Atomic Layer Deposition of Tungsten Nitride Films Using Sequential Surface Reactions,”Journal of the Electrochemical Society, vol. 147, No. 3, pp. 1175-1181, (2000).
Klaus et al., “Atomically controlled growth of tungsten and tungsten nitride using sequential surface reactions,”Applied Surface Science, vols. 162-163, pp. 479-491, (2000).
Klaus et al., “Atomic layer deposition of tungsten using sequential surface chemistry with a sacrificial stripping reaction,”Thin Solid Films, vol. 360, pp. 145-153, (2000).
Lai et al., “Precursors for Organometallic Chemical Vapor Deposition of Tungsten Carbide Films,”Chem. Mater., vol. 7, pp. 2284-2292 (1995).
Ludviksson et al., “Low-Temperature Thermal CVD of Ti-Al Metal Films Using a Strong Reducing Agent,”Chem. Vap. Deposition, vol. 4, No. 4, pp. 129-132, (1998).
Martensson et al., “Atomic Layer Epitaxy of Copper and Tantalum,”Chemical Vapor Deposition, vol. 3, No. 1, pp. 45-50, (1997).
Martensson et al., “CU(THD)2As Copper Source in Atomic Layer Epitaxy,”Electrochemical Society Proceedings, vol. 97-25, pp. 1529-1536. (1996).
Martensson, “Use of atomic layer epitaxy for fabrication of Si/TiN/Cu structures,”J. Vac. Sci. Technol. B, vol. 17, No. 5, pp. 2122-2128, (Sep./Oct. 1999).
Min et al., “Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis (ethylmethylamino)- Titanium and Ammonia,”Jpn. J. Appl, Phys., vol. 37, pp. 4999-5004 (1998).
Min et al., “Atomic Layer Deposition of TiN Thin Films by Sequential Introduction of Ti Precursor and HN3, ”Mat. Res. Soc. Symp. Proc., vol. 514, pp. 337-342 (1998).
Nakajima et al., “Chemical Vapor Deposition of Tungsten Carbide, Molybdenum Carbide Nitride, and Molybdenum Nitride Films,”J. Electrochem. Soc., vol. 144, No. 6, pp. 2096-2100 (Jun. 1997).
Polyakov et al., “Growth of GaBN Ternary Soloutions by Organometallic Vapor Phase Epitaxy,”Journal of Electronic Materials, Vo. 26, No. 3, pp. 237-242, (1997).
Ritala et al., “Atomic Layer Epitaxy Growth of TiN Thin Films from Til4and NH3,”J. Electrochem. Soc., vol. 145, No. 8, pp. 2914-2920 (Aug. 1998).
Sherman et al., “Plasma enhanced atomic layer deposition of Ta for diffusion barrier applications,” AVS 46thInternational Symposium , Paper TF-TuM5 (abstract), (Oct. 26, 1999), Seattle, WA.
Tulhoff et al., “Ullmann's Encyclopedia of Industrial Chemistry,” 5th, Completely Revised Edition, vol. A5, pp. 61-77 (1986).

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