Production of an integrated capacitor

Details Production of an integrated capacitor Production of an integrated capacitor

2007-12-04

2007-12-04

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S391000, C438S386000

Reexamination Certificate

active

11298910

ABSTRACT:
A process for producing a capacitor integrated into an electronic circuit comprises the formation of a trench in a substrate through a conductive portion similar to an MOS transistor gate. Alternating conductive, insulating and conductive layers are deposited inside the trench T in order to form a lower electrode, a dielectric and an upper electrode of the capacitor, respectively. The conductive portion is used to electrically connect the lower electrode to other electronic components of the circuit without an additional cost with respect to the connection of the circuit transistors.

REFERENCES:
patent: 4741802 (1988-05-01), Okumura
patent: 5466625 (1995-11-01), Hsieh et al.
patent: 6700150 (2004-03-01), Wu
patent: 6787836 (2004-09-01), Clevenger et al.
patent: 2001/0039087 (2001-11-01), Jammy et al.

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