Production method for semiconductor device having field-shield i

Details Production method for semiconductor device having field-shield i Production method for semiconductor device having field-shield i

1996-09-09

1999-02-09

Nuzzolillo, Maria

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438306, 438307, H01L 2100, H01L 2700

Patent

active

058693769

ABSTRACT:
The present invention has the object of offering a semiconductor production method which simplifies the fabrication of gate electrodes for MOS-type semiconductor elements and allows a high yield to be maintained. For this purpose, it has steps of forming a field-shield gate insulation film on a semiconductor substrate, forming polycrystalline silicon films having an etching rate which is greater at an upper side than a lower side thereon, and etching the polycrystalline silicon films under conditions which allow for side etching with the silicon oxide film as a mask, so as to make gradually tapered inclines on side walls of field-shield gate electrode.

REFERENCES:
patent: 5243219 (1993-09-01), Katayama
patent: 5604138 (1997-02-01), Lee et al.

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