Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2007-08-14
2007-08-14
Ngô, Ngân V. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C438S502000, C438S509000
Reexamination Certificate
active
10488243
ABSTRACT:
A method of manufacturing a semiconductor device that provides a semiconductor device having improved channel mobility includes a process of forming a gate insulation film of silicon oxide film, silicon nitride film or silicon oxide nitride film or the like on a silicon oxide substrate, and following formation of the gate insulation film on the silicon oxide substrate with heat treatment for a given time at a temperature range of 900° C. to 1000° C. in an atmosphere containing not less than 25% H2O (water).
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Fukuda Kenji
Harada Shinsuke
Kosugi Ryoji
Okamoto Mitsuo
Senzaki Junji
National Institute of Advanced Industrial Science and Technology
Ngo Ngan V.
Sanyo Electric Co,. Ltd.
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