Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1995-05-15
1998-10-06
Niebling, John
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438308, 438798, H01L 21336
Patent
active
058175598
ABSTRACT:
A P-type impurity layer, a silicon monocrystal film, a silicon oxide film and a crystal silicon film are successively formed on a semiconductor substrate by introducing appropriate functional gases on the semiconductor substrate, while irradiating the semiconductor substrate with ionizing radiation or light at a temperature lower than 250.degree. C. After forming a photoresist on the crystal silicon film at a temperature lower than 250.degree. C., the resultant semiconductor substrate is subjected to etching by using the photoresist as a mask, so as to form a gate electrode B out of the silicon oxide film and a gate insulating film out of the silicon oxide film. Then, the resultant semiconductor substrate is subjected to etching again by using the gate electrode as a mask, so as to form a channel region out of the P-type impurity layer. A source electrode and a drain electrode are formed on the respective sides of the gate electrode on the semiconductor substrate by introducing an appropriate functional gas, while irradiating the semiconductor substrate with ionizing radiation or light at a temperature lower than 250.degree. C.
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Mizuno Bunji
Nakayama Ichirou
Okada Kenji
Booth Richard A.
Matsushita Electric - Industrial Co., Ltd.
Niebling John
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