Production method for a semiconductor component

Details Production method for a semiconductor component Production method for a semiconductor component

2005-07-19

2005-07-19

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S096000, C438S239000, C438S244000, C438S253000, C438S652000, C438S656000, C438S658000, C438S660000, C257S065000, C257S066000, C257S068000, C257S071000, C257S296000, C257S303000, C257S306000

Reexamination Certificate

active

06919269

ABSTRACT:
A method for fabricating a semiconductor component includes: deposition of a polysilicon layer on a substrate, deposition of a precursor layer on the polysilicon layer, and deposition of a protective layer on the precursor layer. A crystalline transformation occurs in the precursor layer at a first temperature to form an electrode layer. The layers are patterned to form an electrode stack, and the polysilicon layer is oxidized at a second temperature such that no crystalline transformation occurs in the electrode layer.

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