Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2009-03-13
2011-12-27
Everhart, Caridad (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S765000, C118S058000, C257SE21282, C257SE21285
Reexamination Certificate
active
08084369
ABSTRACT:
Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein in the oxidation-processing, the hydrogen-containing gas is supplied from a plurality of locations of a region which is in proximity to the inner wall of the processing chamber and which corresponds to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber.
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Maeda Kiyohiko
Ozaki Takashi
Yuasa Kazuhiro
Birch & Stewart Kolasch & Birch, LLP
Everhart Caridad
Hitachi Kokusai Electric Inc.
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