Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-01-18
2011-01-18
Everhart, Caridad M (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S765000, C257SE21285, C257SE21552, C118S719000
Reexamination Certificate
active
07871938
ABSTRACT:
Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber which is in a heated state to process the plurality of substrates by oxidation, and transferring the plurality of the oxidation-processed substrates out from the processing chamber, wherein the hydrogen-containing gas is supplied from a plurality of locations of a region corresponding to a substrate arrangement region in which the plurality of substrates are arranged in the processing chamber.
REFERENCES:
patent: 5648282 (1997-07-01), Yoneda
patent: 6074486 (2000-06-01), Yang et al.
patent: 6599845 (2003-07-01), Sato et al.
patent: 6869892 (2005-03-01), Suzuki et al.
patent: 7534730 (2009-05-01), Ozaki et al.
patent: 2007/0157882 (2007-07-01), Ozaki et al.
patent: 1152461 (2001-11-01), None
patent: 01-30234 (1989-02-01), None
patent: 02-28928 (1990-01-01), None
patent: 9-134913 (1997-05-01), None
patent: 11-121389 (1999-04-01), None
patent: 11-204511 (1999-07-01), None
patent: 3242244 (2001-10-01), None
patent: 2002-176052 (2002-06-01), None
patent: 2003-100735 (2003-04-01), None
patent: 4164092 (2008-08-01), None
Maeda Kiyohiko
Ozaki Takashi
Yuasa Kazuhiro
Birch & Stewart Kolasch & Birch, LLP
Everhart Caridad M
Hitachi Kokusai Electric Inc.
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