Producing method of a semiconductor device using CVD processing

Details Producing method of a semiconductor device using CVD processing Producing method of a semiconductor device using CVD processing

2011-06-07

2011-06-07

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S758000, C438S778000, C438S905000, C257SE21170, C118S719000, C118S724000, C204S298230, C204S298250, C427S255280, C427S588000, C134S001300

Reexamination Certificate

active

07955991

ABSTRACT:
Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.

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Office Action dated Jun. 1, 2010 for Japanese Application No. 2005-514067.

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