Producing a thin film transistor substrate by using a...

Details Producing a thin film transistor substrate by using a... Producing a thin film transistor substrate by using a...

2007-11-13

2010-11-02

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S159000

Reexamination Certificate

active

07824972

ABSTRACT:
A thin film transistor substrate that has reduced production cost and defect rate is presented. The thin film transistor substrate includes a gate wiring line formed on an insulating substrate and including a gate electrode, a data wiring line formed on the gate wiring line and including a source electrode and a drain electrode, a passivation layer pattern formed on parts of the data wiring line other than the drain electrode and a pixel region, and a pixel electrode electrically connected to the drain electrode. The pixel electrode includes zinc oxide.

REFERENCES:
patent: 5994174 (1999-11-01), Carey et al.
patent: 2006/0024895 (2006-02-01), Kim
patent: 2006/0046365 (2006-03-01), Park et al.
patent: 1728363 (2006-02-01), None
patent: 1744300 (2006-04-01), None
patent: 06-349338 (1994-12-01), None
EPO Search Report corresponding to EP 07020791.5, dated Apr. 18, 2008, 9 pages.

Affiliated with

Also associated with

Rating

Producing a thin film transistor substrate by using a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Producing a thin film transistor substrate by using a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Producing a thin film transistor substrate by using a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4151933