Producing a sensor with doped microcrystalline silicon channel l

Details Producing a sensor with doped microcrystalline silicon channel l Producing a sensor with doped microcrystalline silicon channel l

1996-09-27

1998-09-29

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

438 50, 438151, H01L 2100

Patent

active

058145303

ABSTRACT:
In producing a sensor device with a sensing element and a thin film transistor, a semiconductor layer with microcrystalline silicon (.mu.c-Si) is produced in which semiconductor channel leads are formed. The .mu.c-Si has a structure that prevents formation of bubbles at the sides of the semiconductor layer during subsequent production of a sensing element in a silicon-based layer. The semiconductor layer can be a deposited doped layer of .mu.c-Si, or a layer of intrinsic .mu.c-Si can be doped. The .mu.c-Si layer can be deposited with a sufficiently small amount of hydrogen to prevent formation of bubbles; it can be deposited with crystalline grain structures permitting hydrogen to dissipate at a sufficient rate to prevent formation of bubbles; or its interfaces can be formed with sufficiently stability to prevent formation of bubbles.

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R. A. Street, C. C. Tsai, J. Kakalios and W. B. Jackson, "Hydrogen Diffusion in Amorphous Silicon", Philosophical Magazine B., 1987, vol. 56, No. 3, pp. 305-320. Month unknown.
C. C. Tsai, R. Thompson, C. Doland, F. A. Ponce, G. B. Anderson and B. Wacker, "Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth", Materials Research Society Symposium Proceedings, vol. 118, 1988, pp. 49-54. Month unknown.
Chuang Chuang Tsai, "Amorphous Silicon and Related Materials", World Scientific Publishing Company, 1989, pp. 123-147. Month unknown.

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