Test method for predicting hot-carrier induced leakage over time

Details Test method for predicting hot-carrier induced leakage over time Test method for predicting hot-carrier induced leakage over time

1993-08-02

1997-02-04

Zanelli, Michael

Boots, shoes, and leggings

364488, 324765, 324768, 324769, G01R 3126, G06F 1750

Patent

active

056005784

ABSTRACT:
A test method and apparatus are provided for predicting hot-carrier induced leakage over time in IGFET's. Test results are used to show how choice of channel length and stress voltages critically affect hot-carrier-induced leakage (HCIL) leakage over time, particularly in devices having submicron channel lengths. Models are developed for predicting leakage current over the long term given short term test results. Alternative design strategies are proposed for reliably satisfying long term leakage requirements.

REFERENCES:
patent: 4382229 (1983-05-01), Cottrell et al.
patent: 4520448 (1985-05-01), Tremintin
patent: 4542340 (1985-09-01), Chakravarti et al.
patent: 4789825 (1988-12-01), Carelli et al.
patent: 4906921 (1990-03-01), Juge
patent: 5012306 (1991-04-01), Tasch, Jr. et al.
patent: 5093275 (1992-03-01), Tasch, Jr. et al.
patent: 5153510 (1992-10-01), Kominsky
patent: 5381345 (1995-01-01), Takegami et al.
Peng Fang et al., "A Method to Project Hot Carrier Induced Punch Through Voltage Reduction for Deep Submicron LDD PMOS FETs at Room Elevated Temperatures", Jan. 1992 IEEE/IRPS, pp. 131-135.
Mitsumasa Koyanagi et al., "Hot-Electron-Induced Punchthrough (HEIP) Effect in Submicrometer PMOSFET's", IEEE Transactions on Electron Devices, vol. ED-34, No. 4, Apr. 1987, pp. 839-844.
M. Koyanagi et al., "Investigation and Reduction of Hot Electron Induced Punchthrough (HEIP) Effect in Submicron PMOSFETs", Feb. 1986 IEEE/IEDM, pp. 722-725.
Reinout Woltjer et al., "A New Monitor to Predict Hot-Carrier Damage of PMOS Transistors", Apr. 1990 IEEE/IDEM, pp. 561-564.
Eiji Takeda et al., "Comparison of Characteristics of n-Channel and p-Channel MOSFET's for VLSI's", IEEE Transactions on Electron Devices, vol. ED-30, No. 6, Jun. 1983, pp. 675-680.
Michael P. Brassington et al., "Suppression of Hot-Carrier Effects in Submicrometer Surface-Channel PMOSFET's", IEEE Transactions on Electron Devices, vol. 35, No. 7, Jul. 1988, pp. 1149-1151.
Acovic et al., "Characterization of Hot-Electron-Stressed MOSFET's by Low Temp. Measurements of the Drain Tunnel Current," IEEE, 1990, pp. 1467-1476.
Fang et al., "Hot-Carrier-Induced off State Current Leakage in Submicrometer PMOSFET Devices," IEEE, 1994, pp. 463-465.
Quader et al., "A new insight into Correlation between DC/AC Hot Carrier Degradation of MOS Devices," pp.13-14.
Hamada et al., "Hot e Trapping Activation Energy under Mechanical Stress", IEEE Trans., pp. 15-16.
Phillips, Jr. et al., "IGFET Hot Electron Emission Model," IBM Technical, pp. 39-42.
E. Kriese et al., "MOSFET Hot Electron Effect Characterization", IBM, pp. 2119-2120, 1976.

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