Processing methods of forming integrated circuitry memory device

Details Processing methods of forming integrated circuitry memory device Processing methods of forming integrated circuitry memory device

1997-08-22

2000-02-15

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, H01L 218242

Patent

active

060252219

ABSTRACT:
Methods of forming integrated circuitry memory devices are described. In a preferred implementation, methods of forming DRAM arrays are described. According to one aspect of the invention, a plurality of continuous active areas are formed relative to a semiconductive substrate. A plurality of word lines and active area isolation lines are formed over the continuous active areas. An insulative layer is formed over the word lines and active area isolation lines and in a common masking step, both capacitor contact openings and bit line contact openings are patterned over the insulative layer. Subsequently, capacitor contact openings and bit line contact openings are etched through the insulative layer over the continuous active area. In a preferred implementation, the capacitor contact openings and the bit line contact openings are contemporaneously patterned and etched. Subsequently, conductive material is formed within the openings to provide conductive plugs. Capacitors and bit lines are then formed to be in electrical communication with the respective conductive plugs within the respective capacitor contact openings or bit line contact openings.

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