Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-31
2006-01-31
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S279000, C438S397000, C438S584000, C438S587000, C438S595000, C438S672000
Reexamination Certificate
active
06991981
ABSTRACT:
Methods of forming electrical connections with an integrated circuitry substrate node location are described. According to one aspect of the invention, a substrate node location is laterally surrounded with insulating material and left outwardly exposed. Conductive material is deposited over the exposed node location. Subsequently, a photomaskless etch of the conductive material is conducted to a degree sufficient to leave a plug of conductive material over the node location. In a preferred implementation, the insulating material with which such node location is surrounded constitutes insulating material portions which are provided relative to conductive lines which are formed over the substrate. In another preferred implementation, such conductive lines form a grid of insulating material which, in turn, defines the node location.
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Guerrero Maria F.
Micro)n Technology, Inc.
Wells St. John P.S.
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