Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2005-08-05
2009-12-08
Kackar, Ram N (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
C156S345290, C118S715000
Reexamination Certificate
active
07628931
ABSTRACT:
In order to facilitate control of a circulating gas, in a processing apparatus100having a showerhead200for supplying a processing gas into a processing chamber via a plurality of gas supply holes, a turbo pump120for evacuating the processing gas from the processing chamber110and a circulating gas piping150for returning at least a portion (circulating gas Q2) of the exhaust gas evacuated from the processing chamber by the turbo pump to the showerhead, the showerhead is provided with a primary gas supply system that supplies a primary gas Q1supplied from a gas source140into the processing chamber via a plurality of primary gas outlet holes h1and a circulating gas supply system that supplies the circulating gas into the processing chamber via a plurality of circulating gas supply holes h2, with the primary gas supply system and the circulating gas supply system constituted as systems independent of each other. Since the primary gas and the circulating gas are allowed to become mixed only in the processing chamber, the circulating gas can be controlled with a greater degree of ease without having to implement pressure control.
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Hirayama Yusuke
Ohiwa Tokuhisa
Saito Masashi
Sakai Itsuko
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Kackar Ram N
Tokyo Electron Limited
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