Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-24
1999-11-16
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438628, 438629, 438644, 438652, 438654, 438626, 438633, 438689, 438690, 438691, 438692, 438693, 451 57, 451 59, 451 37, 451 41, H01L 214763
Patent
active
059857552
ABSTRACT:
A process of polishing two dissimilar conductive materials deposited on semiconductor device substrate optimizes the polishing of each of the conductive material independently, while utilizing the same polishing equipment for manufacturing efficiency. A tungsten layer (258) and a titanium layer (256) of a semiconductor device substrate (250) are polished using one polisher (10) but two different slurry formulations. The two slurries can be dispensed sequentially onto the same polishing platen (132) from two different source containers (111 and 112), wherein the first slurry is dispensed until the tungsten is removed and then the slurry dispense is switched to the second slurry for removal of the titanium. In a preferred embodiment, the first slurry composition is a ferric nitrate slurry while the second slurry composition is an oxalic acid slurry.
REFERENCES:
patent: 4448634 (1984-05-01), Lampert
patent: 5209816 (1993-05-01), Yu et al.
patent: 5352277 (1994-10-01), Sasaki
patent: 5516346 (1996-05-01), Cadien et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5700383 (1997-12-01), Feller et al.
patent: 5756398 (1998-05-01), Wang et al.
patent: 5858813 (1996-05-01), Scherber et al.
Brown et al., "Electrochemical and in situ atomic force microscopy and scanning tunneling microscopy investigations of titanium in oxalic acid solution"; J. Vac. Technl. vol. 10 No. 5 Sep./Oct. 1992, pp. 3001-3006.
Bajaj Rajeev
Farkas Janos
Kim Sung C.
Saravia Jaime
Niebling John F.
Zarneke David A.
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