Processes for fabricating device layers with ultrafine features

Details Processes for fabricating device layers with ultrafine features Processes for fabricating device layers with ultrafine features

1996-06-21

1997-11-18

Breneman, R. Bruce

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask is exposed to nonimaging radiation

430 5, 430396, G03F 700

Patent

active

056884095

ABSTRACT:
A new process and an improved process for fabricating device layers with ultrafine features. In one embodiment a device layer to be patterned is deposited above a substrate and a photoresist layer is deposited above that device layer. A reticle having a first transparent layer and a second opaque layer is used to pattern the photoresist layer. The reticle includes a first region with a first phase and a second region with a second phase such that the incident radiation is shifted when passing through the reticle. The second reticle layer is disposed above the first reticle layer and proximate to the location where the first region transitions to the second region of the first reticle layer. A stepper is used to expose the photoresist to radiation through the reticle. The critical dimensions of the device layer being patterned are controlled by adjusting the partial coherence of the stepper during exposure.

REFERENCES:
patent: 5300379 (1994-04-01), Dao et al.
patent: 5354632 (1994-10-01), Dao et al.
patent: 5387485 (1995-02-01), Sukegawa et al.
patent: 5455144 (1995-10-01), Okamoto et al.
patent: 5527647 (1996-06-01), Doi et al.

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