Processes for electron lithography

Details Processes for electron lithography Processes for electron lithography

1992-12-16

1995-01-17

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430 5, 430269, 430311, 430942, G03F 900

Patent

active

053824989

ABSTRACT:
Projection lithographic systems relying on radiant energy such as electrons and ion beams are substantially affected by the distance between the projection mask and the substrate. In particular, to avoid undesirable limitation of the obtainable resolution, this distance should be a meter or less.

REFERENCES:
patent: 5079112 (1992-01-01), Berger et al.
patent: 5130213 (1992-07-01), Berger et al.
patent: 5258246 (1993-11-01), Berger et al.
patent: 5279925 (1994-01-01), Berger et al.
patent: 5316879 (1994-05-01), Berger et al.
Journal of Vacuum Science and Technology, 15, 849-852, May/Jun. (1978)--H. Ohiwa.
Microcircuit Engineering 83, "Variable Axis Immersion Lens (VAIL)", 107-116, Academic Press London (1983)--M. A. Sturans and H. C. Pfeiffer.
Microelectronic Engineering 17, "Progress in Ion Projection Lithography", 229-240, Elsevier Science Publishers (1992)--A. Chalupka, et al.

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