Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-10-16
2009-02-17
Kik, Phallaka (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C700S097000, C700S120000, C700S121000, C430S005000, C378S035000
Reexamination Certificate
active
07493590
ABSTRACT:
Optical proximity correction methods and apparatus are disclosed. A simulated geometry representing one or more printed features from a reticle is generated using an optical proximity correction (OPC) model that takes into account a reticle design and one or more parameters from a process window of a stepper. An error function is formed that measures a deviation between the simulated geometry and a desired design of the one or more printed features. The error function takes into account parameters (p0. . . pJ) from across the process window in addition to, or in lieu of, a best focus and a best exposure for the stepper. The reticle design is adjusted in a way that reduces the deviation as measured by the error function, thereby producing an adjusted reticle design.
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U.S. Appl. No. 60/806,978, filed Jul. 11, 2006.
Hess Carl
Shi Ruifang
Verma Gaurav
Isenberg Joshua D.
JDI Patent
Kik Phallaka
KLA-Tencor Technologies Corporation
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