Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-07-31
2007-07-31
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S528000, C257S724000, C257SE21022, C438S700000
Reexamination Certificate
active
10909523
ABSTRACT:
A first method of reducing semiconductor device substrate effects comprising the following steps. O+or O2+are selectively implanted into a silicon substrate to form a silicon-damaged silicon oxide region. One or more devices are formed over the silicon substrate proximate the silicon-damaged silicon oxide region within at least one upper dielectric layer. A passivation layer is formed over the at least one upper dielectric layer. The passivation layer and the at least one upper dielectric layer are patterned to form a trench exposing a portion of the silicon substrate over the silicon-damaged silicon oxide region. The silicon-damaged silicon oxide region is selectively etched to form a channel continuous and contiguous with the trench whereby the channel reduces the substrate effects of the one or more semiconductor devices. A second method of reducing substrate effects under analog devices includes forming an analog device on a SOI substrate and then selectively etching the silicon oxide layer of the SOI substrate to form a channel at least partially underlying the analog device.
REFERENCES:
patent: 5539241 (1996-07-01), Abidi et al.
patent: 5600174 (1997-02-01), Reay et al.
patent: 5976945 (1999-11-01), Chi et al.
patent: 6057202 (2000-05-01), Chen et al.
patent: 6180995 (2001-01-01), Hebert
patent: 6287931 (2001-09-01), Chen
patent: 6313008 (2001-11-01), Leung et al.
patent: 6326314 (2001-12-01), Merrill et al.
Chan Lap
Chew Johnny
Chu Sanford
Ng Chit Hwei
Sia Choon Beng
Ackerman Stephen B.
Andujar Leonardo
Chartered Semiconductor Manufacturing Ltd.
Saile Ackerman LLC
Stanton Stephen G.
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