Process to open carbon based hardmask

Details Process to open carbon based hardmask Process to open carbon based hardmask

2005-10-05

2008-10-07

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S737000, C257SE21253, C257SE21257

Reexamination Certificate

active

07432210

ABSTRACT:
A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. The etching is preferably performed in a plasma etch reactor having an HF biased pedestal electrode and a capacitively VHF biased showerhead.

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