Process to manufacture nonvolatile MOS memory device

Details Process to manufacture nonvolatile MOS memory device Process to manufacture nonvolatile MOS memory device

2005-11-08

2005-11-08

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S962000

Reexamination Certificate

active

06962850

ABSTRACT:
Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.

REFERENCES:
patent: 5783498 (1998-07-01), Dotta
patent: 5937295 (1999-08-01), Chen et al.
patent: 6060743 (2000-05-01), Sugiyama et al.
patent: 6090666 (2000-07-01), Ueda et al.
patent: 6128243 (2000-10-01), Chan et al.
patent: 6165842 (2000-12-01), Shin et al.
patent: 6656792 (2003-12-01), Choi et al.
patent: 6690059 (2004-02-01), Lojek
Ghandhi, “VLSI Fabrication Principles”, 1983, pp. 420-424.
Ya-Chin King et al., “MOS Memory Using Germanium Nanocrystals Formed by Thermal Oxidation of Si1-X Gex,” IEDM Tech. Digest, 1998, pp. 115-118.
“A Silicon Nanocrystals Based Memory”, Tiwari et al., Appl. Phys. Lett. 68(10), pp. 1377-1379, Mar. 4, 1996.

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