Process to manufacture crown stacked capacitor structures with H

Details Process to manufacture crown stacked capacitor structures with H Process to manufacture crown stacked capacitor structures with H

1996-01-11

2000-07-18

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 218242

Patent

active

RE0367869

ABSTRACT:
The present invention develops a container capacitor by forming a first insulative layer over conductive word lines; forming an opening between neighboring conductive word lines; forming a conductive plug between neighboring parallel conductive word lines; forming a planarized blanketing second insulating layer over the first insulative layer and the conductive plug; forming an opening into the second insulating layer, the opening thereby forming a container shape; forming a conductive spacer adjacent the wall of the container form, the conductive spacer having inner and outer surfaces; removing the second insulating layer, thereby exposing the outer surface of the conductive spacer; forming a layer of hemispherical grained conductive material superjacent the inner and outer surfaces of the conductive spacer; forming insulating spacers adjacent the inner and outer surfaces of the hemispherical grained conductive material; patterning the hemispherical grained conductive material to form a separate conductive container structure serving as a first capacitor cell plate; removing the insulating spacers; forming a capacitor cell dielectric layer adjacent and coextensive the conductive container structure and the first insulating layer; and forming a second conductive layer superjacent and coextensive the capacitor cell dielectric layer, the second conductive layer forming a second capacitor cell plate. The process of the present invention can be further modified to form a DRAM double container capacitor storage cell.

REFERENCES:
patent: 5082797 (1992-01-01), Chan et al.
patent: 5126280 (1992-06-01), Cham et al.
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5185282 (1993-02-01), Lee et al.
patent: 5229314 (1993-07-01), Okudaria et al.
patent: 5290729 (1994-03-01), Hayashide et al.
patent: 5318920 (1994-06-01), Hayashide
patent: 5366917 (1994-11-01), Watanabe et al.
"A Stacked Capacitor Cell with Ring Structure" by N. Shinmure et al., pp. 833-836. Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan.
"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's" by T. Kaga et al., pp. 255-261, 1991 IEEE.

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