Process to form a crown capacitor structure for a dynamic random

Details Process to form a crown capacitor structure for a dynamic random Process to form a crown capacitor structure for a dynamic random

1998-08-13

2000-01-18

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438970, H01L 218242

Patent

active

06015733&

ABSTRACT:
A process for forming a crown shaped, polysilicon storage node structure, for a DRAM capacitor structure, has been developed. The process features the deposition of a polysilicon layer, on the top surface of a thick insulator layer, as well as on all surfaces of an opening, in the thick insulator layer. Removal of the regions of polysilicon, residing on the top surface of the thick insulator layer, results in a crown shaped, polysilicon storage node structure, in the opening, in the thick insulator layer. The crown shaped, polysilicon storage node structure, was protected from the polysilicon removal procedure, by a photoresist plug, formed overlying the polysilicon layer, in the opening, in the thick insulator layer. The photoresist plug was formed via photoresist application, exposure, and the development of exposed photoresist regions.

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