Process simulation method, semiconductor device...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma

Reexamination Certificate

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C438S514000

Reexamination Certificate

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07972944

ABSTRACT:
A process simulation method includes: converting condition data of plasma doping for introducing an impurity into a semiconductor in a plasma atmosphere to corresponding condition data of ion implantation for implanting impurities as an ion beam into the semiconductor; and calculating device structure data on the basis of the ion implantation condition data converted from the plasma doping condition data.

REFERENCES:
patent: 2007/0224840 (2007-09-01), Renau et al.
patent: 2009/0081858 (2009-03-01), Qin et al.
patent: 2003197493 (2003-07-01), None
Tian, Xiubo et al, “Modeling of the relationship between implantation parameters and implantation dose during plasma immersion ion implantation,” 2000 Physics Letters A 277 p. 42-46.
M. A. Lieberman, “Model of plasma immersion ion implantation,” Oct. 1, 1989, Journal of Applied Physics 66 (7) p. 2926-2929.
Sasaki, et al.; B2H6 Plasma Doping With In-Situ He Pre-amorphization; Symposium On VLSI Technology Digest Of Technical Papers; 2004; pp. 180-181.
Takase, et al.; Shallow Source/Drain Extensions for pMOSFETs With High Activation And Low Process Damage Fabricated By Plasma Doping; IEEE; 1997; pp. 475-478.

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