Process optimization in gas phase dry etching

Details Process optimization in gas phase dry etching Process optimization in gas phase dry etching

1995-05-03

1998-01-27

Angebranndt, Martin

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566251, 156346P, 1566261, 15665911, 1566461, 20429831, 20429832, 216 58, 216 59, H01L 213065

Patent

active

057118493

ABSTRACT:
A method of designing a reactor 10. The present reactor design method includes steps of providing a first plasma etching apparatus 10 having a substrate 21 therein. The substrate includes a top surface and a film overlying the top surface, and the film having a top film surface. The present reactor design method also includes chemical etching the top film surface to define a profile 27 on the film, and defining etch rate data from the profile region. A step of extracting a reaction rate constant from the etch rate data, and a step of using the reaction rate constant in designing a second plasma etching apparatus is also included.

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