Process of manufacturing a semiconductor device

Details Process of manufacturing a semiconductor device Process of manufacturing a semiconductor device

1996-10-09

1997-09-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438300, H01L 21265

Patent

active

056656165

ABSTRACT:
In the Bi-CMOS process of manufacturing a semiconductor device by an effective combination of a bipolar transistor manufacturing process and a CMOS transistor manufacturing process in the case of the formation of a silicide film on a Bi-CMOS device, in which the bipolar transistor having an inner base region made of a silicon film grown by epitaxy and the MOS transistor having silicide formed on the gate electrode, source region and drain region in a self-aligned manner therewith are formed on the same semiconductor substrate, while the silicon film of the inner base region is epitaxially grown in a step, a silicon film is also epitaxially grown on the source/drain regions at the same time in the same step.

REFERENCES:
patent: 4778774 (1988-10-01), Blossfeld
patent: 4892837 (1990-01-01), Kudo
patent: 4902640 (1990-02-01), Sachitano et al.
patent: 5100815 (1992-03-01), Tsubone et al.
patent: 5244533 (1993-09-01), Kimura et al.
patent: 5296391 (1994-03-01), Sato et al.

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