Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2006-01-24
2010-10-19
Davis, Daborah Chacko (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S330000, C430S950000
Reexamination Certificate
active
07816071
ABSTRACT:
A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.
REFERENCES:
patent: 6251562 (2001-06-01), Breyta et al.
patent: 6303260 (2001-10-01), Hurditch et al.
patent: 6346361 (2002-02-01), Shan et al.
patent: 6844131 (2005-01-01), Oberlander et al.
patent: 2002/0039820 (2002-04-01), Ireland et al.
patent: 2002/0097493 (2002-07-01), Li et al.
patent: 2002/0182514 (2002-12-01), Montgomery et al.
patent: 2002/0195419 (2002-12-01), Pavelchek
patent: 2003/0129531 (2003-07-01), Oberlander et al.
patent: 2003/0216026 (2003-11-01), Mukherjee-Roy et al.
patent: 2005/0064322 (2005-03-01), Babich et al.
patent: 2005/0145803 (2005-07-01), Hakey et al.
patent: 2005/0214674 (2005-09-01), Sui et al.
patent: 2006/0275696 (2006-12-01), Zampini et al.
patent: 1 016 930 (2000-07-01), None
patent: 2007-49026 (2007-02-01), None
patent: WO 2004/113417 (2004-12-01), None
N. Matsuzawa et al., “Numerial Investigations on Requirements for BARC Materials for Hyper NA Immersion Lithography”, Journal of Photopolymer Science and Technology vol. 18, No. 5, pp. 587-pp. 592 (2005).
Kawata et al., “Optical Projection Lithography Using Lenses with Numerial Apertures Greater Than Unity”, Microelectronic Enginering vol. 9, No. 1-4, pp. 31-pp. 36 (1989), XP000034346.
Linliu et al., “A Novel Dual Layer Polymeric Anti-Reflective Coating (PARC) for Sub-0.18 μm KrF Lithography”, SPIE vol. 4000, pp. 982-pp. 993 (2000), XP02394894.
Meador et al., “New Materials for 193-nm Trilayer Imaging”, SPIE vol. 5376, No. 1, pp. 1138-pp. 1148 (2004), XP002394895.
Mukherjee-Roy et al., “A dual BARC method for Lithography and Etch for Dual Damascene with Low K”, Japanese Journal of Applied Physics vol. 42, No. 5A, Part 1, pp. 2649-pp. 2653 (2003), XP001192254.
H. L. Chen et al., “Novel bilayer bottom antireflective coating structure for high-performance ArF lithography applications”, J. Microlith., Microfab., Microsyst., vol. 1 No. 1, pp. 58-pp. 62 (2002).
Robert J. Fox, III, “Dual-layer Hybrid (Organic/Inorganic) Anti-Reflective Coating”, Motorola (2002).
C. H. Lin et al., “Optimized bilayer hexamethyldisiloxane film as bottom antireflective coating for both KrK and Arf lithographies”, J. Vac. Sci. Technol. B, vol. 18 No. 6, pp. 3323-pp. 3327 (Nov./Dec. 2000).
Qun Yin Lin et al., “Dual Layer Inorganic SiON Bottom ARC for 0.25 μm DUV Hard Mask Applications”, SPIE vol. 3678, pp. 186-pp. 197 (Mar. 1999).
Chris A. Mack, “The Lithography Expert: Designing a bottom antireflection coating”, Solid State Technology, Microlithography World, vol. 14 No. 1, pp. 12-pp. 14 (Feb. 2005).
Notification Concerning Transmittal of International Preliminary Report on Patentability (Chapter 1 of the Patent Cooperation Treaty) (Form PCT/IB/326), the International Preliminary Report on Patentability (Form PCT/IB/373), and the Written Opinion of the International Searching Authority (Form PCt/ISA/237) for PCT/IB2006/00000409.
Invitation to Written Opinion from the Austrian Patent Office under letter dated Jan. 22, 2009 from the Intellectual Property Office of Singapore for related Singapore Patent Application No. 2007 05658-3—6 Pages.
The Notification of Transmittal of the International Search Report and the Written Opinion of the International Searching Authority, or the Declaration (Form PCT/ISA/220), of the International Search Report (Form PCT/ISA/210) and of theWritten Opinion of the International Searching Authority or PCT/IB2006/000409, Nov. 2006.
Dammel et al., “193 nm Immersion Lithography—Taking the Plunge”, Journal of Photopolymer Science and Technology vol. 17, No. 4, pp. 587-pp. 602 (2004), XP008051455.
English Language Abstract of JP 2007-49026 A, Feb. 22, 2007.
H. L. Chen et al., “Multi-layer Bottom Antireflective Coating Structures for High NA ArF System Applications”, SPIE vol. 4690, pp. 1085-pp. 1092 (Apr. 2002).
English Translation of Office Action from Chinese Patent Application No. CN 200680008827.0 dated Jul. 8,2010.
Abdallah David J.
Biafore John
Dammel Ralph R.
Neisser Mark O.
Pawlowski Georg
AZ Electronic Materials USA Corp.
Chacko Davis Daborah
Jain Sangya
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