Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-05-31
2000-12-12
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438687, 438688, 438780, H01L 2144
Patent
active
061598542
ABSTRACT:
A process of growing a conductive layer on a substrate by a chemical reaction of a source gas on the substrate includes preparing a substrate having an area covered with a coating layer of a material different from a material of the substrate and an area not covered with the coating layer; supplying a first source gas onto the substrate and causing a chemical reaction of the first source gas to occur on the substrate only in the area not covered with the coating layer, thereby selectively growing a first conductive layer on the substrate only in the area not covered with the coating layer; terminating the supplying of the first source gas; and supplying a second source gas onto the substrate and causing a chemical reaction of the second source gas to occur on both of the first conductive layer and the coating layer, thereby unselective growing a second conductive layer of the same conductive material as the first conductive layer, on both of the first conductive layer and the coating layer. A chemical vapor deposition process for growing a conductive layer, includes maintaining, in a container, an amount of a source liquid containing at least one of constituent elements of the conductive layer; introducing the source liquid from the container and a heated carrier gas into a vaporizer vaporizing the source liquid by heating to generate a source gas in the vaporizer; and supplying from the vaporizer the source gas together with the heated carrier gas immediately into a reactor for chemical vapor deposition.
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Kitahara Kuninori
Matsumiya Yasuo
Ohtsuka Nobuyuki
Berry Renee R
Fujitsu Limited
Nelms David
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