Process of growing conductive layer from gas phase

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438687, 438688, 438780, H01L 2144

Patent

active

061598542

ABSTRACT:
A process of growing a conductive layer on a substrate by a chemical reaction of a source gas on the substrate includes preparing a substrate having an area covered with a coating layer of a material different from a material of the substrate and an area not covered with the coating layer; supplying a first source gas onto the substrate and causing a chemical reaction of the first source gas to occur on the substrate only in the area not covered with the coating layer, thereby selectively growing a first conductive layer on the substrate only in the area not covered with the coating layer; terminating the supplying of the first source gas; and supplying a second source gas onto the substrate and causing a chemical reaction of the second source gas to occur on both of the first conductive layer and the coating layer, thereby unselective growing a second conductive layer of the same conductive material as the first conductive layer, on both of the first conductive layer and the coating layer. A chemical vapor deposition process for growing a conductive layer, includes maintaining, in a container, an amount of a source liquid containing at least one of constituent elements of the conductive layer; introducing the source liquid from the container and a heated carrier gas into a vaporizer vaporizing the source liquid by heating to generate a source gas in the vaporizer; and supplying from the vaporizer the source gas together with the heated carrier gas immediately into a reactor for chemical vapor deposition.

REFERENCES:
patent: 4956204 (1990-09-01), Amazawa et al.
patent: 5180687 (1993-01-01), Mikoshiba et al.
patent: 5188975 (1993-02-01), Kojima et al.
patent: 5217756 (1993-06-01), Shinzawa
patent: 5316972 (1994-05-01), Mikoshiba et al.
patent: 5545591 (1996-08-01), Sugai et al.
patent: 5572072 (1996-11-01), Lee
patent: 5599741 (1997-02-01), Matsumoto et al.
D.M. Speckman et al., "Influence of Flow Dynamics on the Morphology of CVD Aluminum Thin Films", Mat. Res. Soc. Symp. Proc., vol. 334, pp 283-288.
K. Tsubouchi et al., "Complete-planarization . . . ", Appl. Phys. Lett. 57(12), 1990, pp. 1221-1223.
N. Takeyasu et al., "Characterization . . . ", Extended Abstracts of the 1993 Int. Conf. Solid State Devices and Materials, pp. 180-182.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process of growing conductive layer from gas phase does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of growing conductive layer from gas phase, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of growing conductive layer from gas phase will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-216459

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.