Process of forming a field effect transistor without spacer mask

Details Process of forming a field effect transistor without spacer mask Process of forming a field effect transistor without spacer mask

1997-08-06

1999-09-21

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438231, 438304, 438305, H01L 21265

Patent

active

059565900

ABSTRACT:
A field effect transistor which is not susceptible to mask edge detects at its gate spacer oxides. The transistor is formed upon a semiconductor substrate through successive layering of a gate oxide, a gate electrode and a gate cap oxide. A pair of curved gate spacer oxides are then formed covering opposite edges of the stack of the gate oxide, the gate electrode and the gate cap oxide. The semiconductor substrate is then etched to provide a smooth topographic transition from the gate spacer oxides to the etched semiconductor surface. Source/drain electrodes are then implanted into the etched semiconductor substrate and annealed to yield the finished transistor. A second embodiment of the field effect transistor possesses a polysilicon gate. Alter removal of the gate cap oxide, a metal layer may be deposited and sintered upon the polysilicon gate and the source/drain electrodes. The metal salicide layers formed upon the electrodes of the transistor have limited susceptibility to parasitic current leakage.

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