Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-17
2007-07-17
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S653000
Reexamination Certificate
active
10833177
ABSTRACT:
A method of forming a composite barrier layer comprising the following steps. A substrate having a dielectric layer formed thereover is provided. An opening exposing a first portion of the substrate is formed within the dielectric layer. A dielectric flash layer is formed within the opening and over the first exposed portion of the substrate. The dielectric flash layer lines the opening. The bottommost horizontal portion of the dielectric flash layer is removed to expose a second portion of the substrate. An aluminum layer is formed over the etched dielectric flash layer and over the second exposed portion of the substrate. A barrier metal layer is formed over the aluminum layer. The etched dielectric flash layer, the aluminum layer and the barrier metal layer comprise the composite barrier layer. A planarized metal plug is formed within the barrier metal layer lined opening.
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Badam Ramana Murthy
Li Chaoyong
Mukherjee-Roy Moitreyee
Su Siaw Suian Sabrina
Ackerman Stephen B.
Agency for Science Technology and Research
Picardat Kevin M.
Saile Ackerman LLC
Stanton Stephen G.
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