Process of fabricating tunnel-oxide nonvolatile memory devices

Details Process of fabricating tunnel-oxide nonvolatile memory devices Process of fabricating tunnel-oxide nonvolatile memory devices

1997-01-31

1998-10-06

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438981, 438770, H01L 218247

Patent

active

058175571

ABSTRACT:
A process including the steps of forming a gate oxide layer on a semiconductor substrate; masking the gate oxide layer with a nitride mask forming openings in the gate oxide layer using the nitride mask; and forming, at the openings, tunnel oxide regions of a thickness smaller than the thickness of the gate oxide layer. The nitride mask presents a thickness smaller than the width of the openings to improve etching of the gate oxide layer and subsequent washing. The mask also protects the covered layers when etching the gate oxide and growing the tunnel oxide regions, and is removed easily without damaging the exposed layers.

REFERENCES:
patent: 5429970 (1995-07-01), Hong
patent: 5496753 (1996-03-01), Sakurai et al.
patent: 5580815 (1996-12-01), Hsu et al.
Wolf et al., "Silicon Processing for the VLSI Era vol. 1: Process Technoloy", Lattice Press, pp. 516-519, 534 1986.
Wolf, "Silicon Processing for the VLSI Era vol. 3: The Submicron MOSFET", Lattice Press, pp. 495-499 1995.

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