Process of fabricating termination region for trench MIS device

Details Process of fabricating termination region for trench MIS device Process of fabricating termination region for trench MIS device

2006-10-10

2006-10-10

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S197000, C438S282000, C438S243000, C438S460000, C438S462000, C257S329000, C257S334000, C257SE21585

Reexamination Certificate

active

07118953

ABSTRACT:
A trench MIS device is formed in a semiconductor die that contains a P-epitaxial layer that overlies an N+ substrate and an N-epitaxial layer. In one embodiment, the device includes a drain-drift region that extends from the bottom of the trench to the N-epitaxial layer. A termination region of the die includes a half-trench at an edge of the die and an N-type region that extends from a bottom of the half-trench to the substrate. An insulating layer and an overlying metal layer extend from the surface of the epitaxial layer into the half-trench. Preferably, the elements of the termination region are formed during the same process steps that are used to form the active elements of the device.

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