Process of fabricating semiconductor device

Details Process of fabricating semiconductor device Process of fabricating semiconductor device

1997-02-24

1999-08-17

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438139, 438282, 438300, 438305, 438453, H01L 218238

Patent

active

059406992

ABSTRACT:
A process of fabricating a semiconductor device, includes the steps of: forming a side wall insulating film on a side portion of a gate electrode formed on a silicon substrate; forming a source/drain region in the silicon substrate, and subjecting the source/drain region to an activating heat treatment; forming a metal film on the surface of the source/drain region, and making the metal film react with the silicon substrate by a heat treatment thereby forming a silicide layer; wherein a first furnace heat treatment is performed after formation of the side wall insulating film and before formation the source/drain region; and an oxide film formed on the surface of the silicon substrate is removed before formation of the metal film, a surface side of the silicon substrate is made amorphous by doping ions of arsenic into the silicon substrate, and the metal film is formed.

REFERENCES:
patent: 5017508 (1991-05-01), Dodt et al.
patent: 5168072 (1992-12-01), Moslehi
patent: 5420079 (1995-05-01), Onishi et al.
patent: 5541131 (1996-07-01), Yoo et al.
patent: 5605854 (1997-02-01), Yoo
patent: 5668024 (1997-09-01), Tsai et al.

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