Process of fabricating salicide structure from high-purity repro

Details Process of fabricating salicide structure from high-purity repro Process of fabricating salicide structure from high-purity repro

1995-12-22

1999-05-04

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438655, 438681, 438683, 438906, H01L 2128, H01L 21335

Patent

active

058997202

ABSTRACT:
A cobalt disilicide layer is formed on a silicon layer through an etching of natural oxide grown on the silicon layer, a deposition of a cobalt layer by using a chemical vapor deposition, a conversion of the cobalt layer on the silicon layer to a cobalt suicide layer mainly composed of CoSi, an etching of the remaining cobalt layer and a conversion of the cobalt silicide layer to a cobalt disilicide layer, and the etching of the natural oxide to the conversion to the cobalt silicide are carried out in a vacuum ambience without breakage of the vacuum so that the cobalt disilicide does not penetrate into the silicon layer.

REFERENCES:
patent: 4647361 (1987-03-01), Bauer
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5372850 (1994-12-01), Uchikawa et al.
patent: 5403434 (1995-04-01), Moslehi
patent: 5403620 (1995-04-01), Kaesz et al.
patent: 5478780 (1995-12-01), Koezner et al.
patent: 5563100 (1996-10-01), Matsubara
Search Report of GB 9526450 3.
"A Manufacturable Process for the Formation of Self Aligned Cobalt Silicide in a Sub Micrometer CMOS Technology", Berti, C., et al., Jun. 9-10, 1992, VMIC Conf., pp. 267-273.
"Formation of Self-Aligned TiN/CoSi2 Bilayer from Co/Ti/Si and Its Applications in Salicide, Diffusion Barrier and Contact Fill", Wei, C. S., et al., Jun. 12-13, 1990, VMIC Conf., pp. 233-239.

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