Process of fabricating NAND-structure flash EEPROM using liquid

Details Process of fabricating NAND-structure flash EEPROM using liquid Process of fabricating NAND-structure flash EEPROM using liquid

1995-12-22

1998-06-23

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438296, 438424, H01L 218247

Patent

active

057705011

ABSTRACT:
A process of fabricating a flash EEPROM having a NAND structure by using the liquid phase deposition (LPD) technique and self-alignment technique is disclosed to achieve higher density and reliability of flash memory cells and eliminating the shortcomings of the bird's beaks of field oxides.

REFERENCES:
patent: 5173436 (1992-12-01), Gill et al.
patent: 5256593 (1993-10-01), Iwai
patent: 5516721 (1996-05-01), Galli et al.
patent: 5559048 (1996-09-01), Inoue

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