Process of fabricating miniature memory cell having storage capa

Details Process of fabricating miniature memory cell having storage capa Process of fabricating miniature memory cell having storage capa

1996-03-26

1999-07-20

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438239, 438381, H01L 218242

Patent

active

059267097

ABSTRACT:
A node contact hole is formed in an inter-level insulating layer through an anisotropic etching using an inner conductive side wall formed in a primary opening as an etching mask, and an outer conductive side wall concurrently formed from a doped polysilicon together with a conductive plug in the node contact hole increases the surface area of a storage node electrode of a stacked storage capacitor.

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