Process of fabricating high resistance CMOS resistor

Details Process of fabricating high resistance CMOS resistor Process of fabricating high resistance CMOS resistor

2007-01-30

2007-01-30

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S329000, C438S330000, C438S382000, C257S350000, C257S358000, C257S363000, C257SE27016

Reexamination Certificate

active

10823238

ABSTRACT:
A process of forming a high resistance CMOS resistor with a relatively small die size is provided. According to an aspect of the present invention, the process of fabricating a high resistance resistor is a standard CMOS process that does not require any additional masking. An n-well is firstly formed in a p-type silicon substrate. A nitride film is then deposited and patterned to form a patterned mask layer. The patterned mask layer serves as a mask. A p-field region is formed in the n-well to form a CMOS resistor. The CMOS resistor according to the present invention has a resistance of 10 kΩ–20 kΩ per square.

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