Process of fabricating dynamic random access memory device havin

Details Process of fabricating dynamic random access memory device havin Process of fabricating dynamic random access memory device havin

1995-11-28

1998-03-10

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438240, 438253, 438256, 438396, 438399, H01L 218238

Patent

active

057260834

ABSTRACT:
When tantalum oxide is used for a dielectric film of a stacked type storage capacitor forming a memory cell together with a switching transistor, heat treatments are limited to 530 degrees centigrade in the stages after the deposition of the tantalum oxide, and leakage current across the tantalum oxide is drastically decreased.

REFERENCES:
patent: 5302549 (1994-04-01), Santangelo et al.
patent: 5346843 (1994-09-01), Kuroda
patent: 5429979 (1995-07-01), Lee et al.
patent: 5508221 (1996-04-01), Kamiyama
patent: 5569618 (1996-10-01), Matsubara

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