Process of fabricating a semiconductor device in which one porti

Details Process of fabricating a semiconductor device in which one porti Process of fabricating a semiconductor device in which one porti

1994-03-08

1997-04-29

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

117 8, 438487, H01L 21322, H01L 21324, H01L 21336

Patent

active

056248512

ABSTRACT:
A semiconductor circuit and a process for fabricating the same, said process comprising forming in contact with an amorphous silicon film, a substance containing a catalytic element; crystallizing selected portions of the amorphous silicon film by annealing said film at a temperature lower than the ordinary crystallization temperature of an amorphous silicon film; and then crystallizing the rest of the portions by irradiating thereto laser beam or an intense light having an intensity equivalent thereto. A process similar to the one above, wherein, the catalytic element is incorporated directly into the amorphous silicon film instead of bringing a substance containing the same into contact with the amorphous silicon film.

REFERENCES:
patent: 4571486 (1986-02-01), Arai
patent: 4772927 (1988-09-01), Saito et al.
patent: 4986213 (1991-01-01), Yamazaki et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5156994 (1992-10-01), Moslehi
patent: 5236850 (1993-08-01), Zhang
patent: 5252502 (1993-10-01), Havemann
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5278093 (1994-01-01), Yonehara
patent: 5328861 (1994-07-01), Miyakawa
patent: 5352291 (1994-10-01), Zhang et al.
Kawazu et al., "Initial Stage of the Interfacial Reaction Between Nickel and Hydrogenated Amorphous Silicon", Japanese Journal of Applied Physics, Apr. 1990, vol. 29, No. 4, pp. 729-738.
Kawazu et al., "Low-Temperature Crystallization of Hydrogenated Amorphous Silicon Induced by Nickel Silicide Formation", Japanese Journal of Applied Physics Dec. 1990, vol. 29, No. 12, pp. 2968-2704.
Hayzelden et al., "In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon", Appl. Phys. Lett., vol. 60, No. 2, 13 Jan. 1992, pp. 225-227.
A.V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.

Affiliated with

Also associated with

Rating

Process of fabricating a semiconductor device in which one porti does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of fabricating a semiconductor device in which one porti, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of fabricating a semiconductor device in which one porti will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-705233