Process of fabricating a semiconductor device having cobalt niob

Details Process of fabricating a semiconductor device having cobalt niob Process of fabricating a semiconductor device having cobalt niob

1997-12-01

1999-07-27

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

H01L 21336

Patent

active

059306327

ABSTRACT:
A semiconductor device having a cobalt niobate-cobalt silicide gate electrode structure is provided. A semiconductor device, consistent with one embodiment of the invention, is formed by forming a cobalt niobate gate insulating layer over the substrate and forming a cobalt silicide layer over the cobalt niobate layer. The cobalt silicide layer and cobalt niobate gate insulating layer may, for example, be selectively removed to form at least one cobalt silicide-cobalt niobate gate electrode structure. The cobalt niobate-cobalt silicide gate electrode structure can, for example, increase the operating speed of the device as compared to conventional transistors.

REFERENCES:
Chang, D.D.; Ling, H.C. "The effects of dopants on the electrical resistivity in lead magnesiom niobate multilayer capacitors." IEEE Trans. on Components, Hybrids and Man'f. Tech., vol. 12, No. 2, pp. 310-315. Abstract Only, Jun. 1989.

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