Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-03-26
1998-09-22
Breneman, R. Bruce
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438695, 438740, H01L 21302
Patent
active
058113576
ABSTRACT:
A dry etching process for etching an oxide layer on a substrate in which a plasma is created in a gaseous mixture containing C.sub.4 F.sub.8 and C.sub.2 F.sub.6. The dry etch process is useful for etching an oxide layer stopping on a silicon nitride layer on a semiconductor wafer of an integrated circuit structure as it eliminates resist blistering without sacrificing high selectivity to nitride, via wall angle, and/or etch uniformity.
REFERENCES:
patent: 4324611 (1982-04-01), Vogel et al.
patent: 5654233 (1997-08-01), Yu
Armacost Michael D.
Passow Michael L.
Schepis Dominic J.
Sendelbach Matthew J.
Wagner Tina J.
Breneman R. Bruce
Goudreau George
International Business Machines - Corporation
Mortinger, Esq. Alison
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