Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface
Patent
1984-10-15
1987-06-02
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Forming nonplanar surface
430192, 430193, 430309, 430331, G03F 726
Patent
active
046703721
ABSTRACT:
A positive photoresist metal ion aqueous developer is provided that gives a high contrast to the photoresist.
The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a carboxylated surfactant. The incorporation of the carboxylated surfactant provides the unexpected increase in the contrast of the photoresist. The addition of the carboxylated surfactant increases the gamma from a typical photoresist gamma (.gamma.) of 3 or less to a gamma greater than 5.
The high contrast photoresist provides linewidth control and affords improved process latitude in photoresist imaging. The linewidth control is particularly critical in cases where fine lines are to be defined in the resist that covers steps of topography on the coated substrate. The higher the contrast, the less affected the resist by the topography, provided the exposure is adequate to expose the resist. The process latitude afforded by the high contrast is a result of the ability to over develop (develop longer) the exposed resist without affecting the unexposed resist in the adjacent areas.
REFERENCES:
patent: 3586504 (1971-06-01), Coates et al.
patent: 3639185 (1972-02-01), Colom et al.
patent: 3868254 (1975-02-01), Wemmers
patent: 3961100 (1976-06-01), Harris et al.
patent: 4147545 (1979-04-01), Rowe et al.
patent: 4212935 (1980-07-01), Canavello et al.
patent: 4275100 (1981-06-01), Datta
patent: 4302348 (1981-11-01), Requejo
patent: 4307178 (1981-12-01), Kaplan et al.
patent: 4379827 (1983-04-01), Hallman
patent: 4421844 (1983-12-01), Buhr et al.
patent: 4467027 (1984-08-01), Yamamoto et al.
English Translation of West German Pat. No. 2,504,130, Fuji Photo, published 8/1975, pp. 1-22.
IBM Technical Disclosure Bulletin, vol. 23, No. 3, Aug. 1980.
Lewis James M.
Owens Robert A.
Bowers Jr. Charles L.
Petrarch Systems Inc.
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